Our patented electrodeposition processes from bespoke precursor compounds can produce a range of elements and compound semiconductor compositions with exceptional control and purity. For example, we have produced Ge 2 Sb 2 Te 5 (GST) phase change memory films with excellent switching properties.
There is great scope to further develop electrodeposition of compound semiconductor materials as a practical deposition technology, to make thermoelectrics and IR sensors and to scale down the size of phase change memory cells. In the production of very small devices electrodeposition can go beyond the capability of techniques such as ALD: feature sizes of 2-3 nm are well within reach and material deposition can be carried out into a variety of device architectures – we just need an electrical pathway.
Key publications:
Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition