Phase change memory: PCM is a non-volatile memory type in which data is stored when the structure of the PCM material is modified between amorphous and crystalline states, resulting in a change in the resistivity of the material. Some of the biggest challenges in working with these materials include the requirement for ternary alloys of semiconducting metal chalcogenides, such as Ge 2 Sb 2 Te 3 (GST). During the ADEPT programme, we will be building on our previous demonstration of depositing device-quality GST, in addition to using the expertise held within the research team, and the Southampton Nanofabrication Centre to drive forward the development of novel phase change memory devices at the nanoscale.
