Module overview
The module will discuss all important issues related to scaling down the transistor size into the nanometer regime, such as high-k dielectrics and FINFETs. The teaching will be complemented with a finite element simulation of the MOS scaling which will bring into practice many of the above improvements. Silvaco TCAD tools are used: industry-standard software to simulate semiconductor processing and device operation (Technology Computer-Aided Design).
Linked modules
Pre-requisite: ELEC2201
Aims and Objectives
Learning Outcomes
Knowledge and Understanding
Having successfully completed this module, you will be able to demonstrate knowledge and understanding of:
- The operation principle of CMOS transistors
- The fundamental device physics of semiconductors
Subject Specific Intellectual and Research Skills
Having successfully completed this module you will be able to:
- Construct the process flows to fabricate CMOS transistors
Subject Specific Practical Skills
Having successfully completed this module you will be able to:
- Simulate the performance of CMOS transistors
Syllabus
Nanoelectronics
- Technology roadmap of nano-electronics (Moore's law)
- Scaling of devices and technology jump
- Energy band structure in Silicon
Metal Oxide Semicoductor Field Effect Transistors (MOSFET)
- Basic MOSFET Operation
- Threshold Voltage and Subthreshold Slope
- Current/voltage characteristics
- Finite Element Modelling of MOS
Advanced CMOS transistors scaling
- Challenge of the CMOS technologies
- High-k dielectrics and Gate stack
- Future interconnect
- FINFET and architecture
- Design for Variability
- Mobility enhancement
Recent research case studies
- Front-end CMOS
- Quantum Technologies
- Si Photonics
- Nano-Photonics, Bio-Sensors, Plasmonics
Learning and Teaching
Teaching and learning methods
The module will be taught using a combination of lectures and labs
| Type | Hours |
|---|---|
| Completion of assessment task | 22 |
| Preparation for scheduled sessions | 12 |
| Wider reading or practice | 58 |
| Follow-up work | 12 |
| Supervised time in studio/workshop | 12 |
| Lecture | 24 |
| Revision | 10 |
| Total study time | 150 |
Resources & Reading list
General Resources
On-line resources. any other (online) semiconductor device physics book would be appropriate as well
Textbooks
Yuan Taur and Tak H. Ning. Fundamentals of Modern VLSI Devices. Cambridge.
B.G. Streetman and S. Banerjee. Solid State Electronic Devices. (Prentice Hall.
Assessment
Assessment strategy
Students can get good experiences by simulating the MOSFET characteristics after learning the fundamental principles in the lectures. Simulations and lecturing are complementary each other, and students can get more insights in understanding the MOSFETs. The learning outcomes include the capabilities to simulate unknown new device performance for their future jobs in CMOS or even beyond-CMOS industries.
Summative
This is how we’ll formally assess what you have learned in this module.
| Method | Percentage contribution |
|---|---|
| Examination | 70% |
| Report | 30% |
Referral
This is how we’ll assess you if you don’t meet the criteria to pass this module.
| Method | Percentage contribution |
|---|---|
| Examination | 100% |
Repeat
An internal repeat is where you take all of your modules again, including any you passed. An external repeat is where you only re-take the modules you failed.
| Method | Percentage contribution |
|---|---|
| Examination | 100% |
Repeat Information
Repeat type: Internal & External