About the project
This project aims to develop a scalable and controllable doping technique to overcome the major obstacle of doping 2D materials. Our vision is to encourage the semiconductor industry to adopt 2D materials into their manufacturing pipelines and integrate them into 2 nm node transistor technologies for data communications, computing and sensing.
You will develop new and innovative techniques to dope 2D materials on a large scale and integrate them into advanced transistor architectures using our cutting-edge cleanroom facility. You will then characterise the doped materials, test their transistor performance, and compare your results to simulated devices.
You will also work with top research groups from Imperial College, University of Cambridge, and UCL, focusing on nanoelectronics, nanophotonics, and 2D materials.
You will create a new method for doping transition metal dichalcogenides and explore their commercial possibilities by collaborating with our industrial partners, including Intel, Graphenea, and Grolltex.
The research will be based in the School of Electronics and Computer Science, where you'll have access to one of Europe's largest university cleanrooms and several material and electronic characterisation suites. This means you'll take a concept from start to finish, covering design, simulation, manufacturing, and testing.
In your first year, you'll attend our training programme while working on your research project. This helps you transition smoothly from your degree course to the more open-ended research you'll do in later years, guided by your supervisors.
As your research progresses, you'll present your work at international conferences and publish papers in top academic journals.
By the end of this PhD, you'll have skills at the cutting edge of future semiconductor research and will have had many opportunities to interact with a lively community of PhD students and researchers across the Southampton Campus.
